SI4936ADY Vishay Siliconix, SI4936ADY Datasheet - Page 3

• Manufacturer Part Number: SI4936ADY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71132
S-31989—Rev. B, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 5.9 A
On-Resistance vs. Drain Current
= 15 V
6
3
V
SD
Q
0.4
g
T
V
- Source-to-Drain Voltage (V)
I
J
GS
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
= 4.5 V
12
6
0.6
0.8
18
9
1.0
T
V
J
GS
= 25_C
24
12
= 10 V
1.2
1.4
30
15
1000
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 5.9 A
C
= 10 V
rss
2
6
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
= 5.9 A
Vishay Siliconix
C
50
C
oss
iss
Si4936ADY
18
6
75
100
24
www.vishay.com
8
125
150
10
30
3