SI4936ADY Vishay Siliconix, SI4936ADY Datasheet - Page 2

• Manufacturer Part Number: SI4936ADY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2
Si4936ADY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0.0
Parameter
0.5
a
a
V
DS
1.0
a
Output Characteristics
- Drain-to-Source Voltage (V)
1.5
a
a
J
V
= 25_C UNLESS OTHERWISE NOTED)
GS
= 10 thru 5 V
2.0
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
4 V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
3.0
3 V
2 V
3.5
4.0
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 1.7 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
DS
DD
DD
= 1.7 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 4.5 V, I
= 15 V, I
= 30 V, V
= 15 V, R
= 15 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 5.9 A
= 4.9 A
= 5.9 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
J
30
24
18
12
D
G
6
0
= 55_C
= 5.9 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
1.0
30
2
0.032
0.042
Typ
0.8
2.3
2.0
15
13
14
30
30
T
6
5
S-31989—Rev. B, 13-Oct-03
C
25_C
3
Document Number: 71132
= - 55_C
Max
"100
0.036
0.053
1.2
20
12
25
60
10
60
1
5
4
125_C
Unit
nC
nA
mA
mA
ns
W
W
V
A
S
V
5