2SK0601 Panasonic Semiconductor, 2SK0601 Datasheet - Page 2

• Manufacturer Part Number: 2SK0601
• Description: Silicon N-Channel MOS FET
• Manufacturer: Panasonic Semiconductor

Silicon MOS FETs (Small Signal)
2
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
6
5
4
3
2
1
0
–50
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
Ambient temperature Ta ( ˚C )
20
1
–25
40
| Y
R
Copper foil of the drain portion
should have a area of 1cm
or more and the board
thickness should be 1.7mm.
DS(on)
2
P
60
fs
D
0
|
80
V
3
GS
Ta
=5V
25
V
100
Ta
GS
4
10V
120
I
D
V
f=1kHz
Ta=25˚C
=500mA
50
GS
DS
5
140
=15V
2
( V )
160
75
6
120
100
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
0
0
Drain to source voltage V
1
Drain to source voltage V
C
iss
3
2
, C
I
10
oss
D
4
, C
30
V
rss
DS
6
C
C
C
100
iss
oss
rss
V
V
Ta=25˚C
GS
DS
8
V
f=1MHz
Ta=25˚C
300
DS
DS
=5.5V
GS
4.5V
3.5V
=0
5V
4V
3V
( V )
( V )
1000
10
1.2
1.0
0.8
0.6
0.4
0.2
0
6
5
4
3
2
1
0
0
0
Gate to source voltage V
Gate to source voltage V
2
4
R
DS(on)
I
D
4
8
V
12
GS
6
V
2SK601
GS
Ta=75˚C
25˚C
–25˚C
I
V
Ta=25˚C
D
=500mA
16
DS
8
GS
GS
=10V
( V )
( V )
10
20