2SK0601 Panasonic Semiconductor, 2SK0601 Datasheet
2SK0601
Manufacturer Part Number
2SK0601
Description
Silicon N-Channel MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK0601.pdf
(2 pages)
Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
*
* 1
* 2
t = 1
f = 1MH
PC board: Copper foil of the drain portion should have a area of 1cm
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
V
Pulse measurement
t
Low ON-resistance R
High-speed switching
Allowing to be driven directly by CMOS and TTL
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
on
Features
Absolute Maximum Ratings
Electrical Characteristics
in
, t
S
= 10V
off
Z
measurement circuit
50
Parameter
Parameter
more and the board thickness should be 1.7mm.
V
68
DS(on)
DD
= 30V
V
out
Symbol
V
V
I
I
P
T
T
Symbol
I
I
V
V
R
| Y
C
C
C
t
t
on
off
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
DS
GSO
DSS
th
* 2
*
fs
* 2
(Ta = 25°C)
|
V
V
out
(Ta = 25°C)
* 1
in
V
V
I
I
I
I
V
DS
D
D
D
DS
GS
DS
55 to +150
Ratings
= 1mA, V
= 0.5A, V
= 0.2A, V
t
on
= 100 A, V
10%
= 60V, V
= 20V, V
= 10V, V
±0.5
150
90%
±1
80
20
1
V
V
out
Conditions
in
DS
GS
DS
GS
DS
GS
= V
= 10V
= 15V, f = 1kHz
GS
= 0
= 0
= 0, f = 1MHz
= 0
Unit
GS
°C
°C
W
V
V
A
A
t
off
10%
2
or
90%
Marking Symbol: O
0.4±0.08
0.5±0.08
1.5±0.1
min
1.5
80
45˚
3
3.0±0.15
4.5±0.1
1.6±0.2
2
Mini-Power Type Package (3-pin)
marking
300
typ
45
30
15
20
2
8
1
max
0.1
3.5
10
4
1.5±0.1
EIAJ: SC-62
1: Gate
2: Drain
3: Source
0.4±0.04
unit: mm
Unit
mS
pF
pF
pF
ns
ns
V
V
A
A
1
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2SK0601 Summary of contents
Page 1
Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching Features Low ON-resistance R DS(on) High-speed switching Allowing to be driven directly by CMOS and TTL Mini-power type package, allowing downsizing of the sets and automatic insertion through ...
Page 2
Silicon MOS FETs (Small Signal 1.6 Copper foil of the drain portion should have a area of 1cm 2 1.4 or more and the board thickness should be 1.7mm. 1.2 1.0 0.8 0.6 0.4 0 ...