IRFM210A Fairchild Semiconductor, IRFM210A Datasheet - Page 3

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IRFM210A

Manufacturer Part Number
IRFM210A
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
POWER MOSFET
10
10
10
3 0 0
2 0 0
1 0 0
-1
1
0
10
4
3
2
1
0
0
N-CHANNEL
10
0
-1
Fig 5. Capacitance vs. Drain-Source Voltage
0
Top :
Bottom : 4.5 V
Fig 3. On-Resistance vs. Drain Current
C
C
C
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 0 V
V
1 5 V
rss
iss
oss
GS
Fig 1. Output Characteristics
2
V
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
, Drain Current [A]
10
0
4
@ Notes :
1. 250 s Pulse Test
2. T
C
C
C
iss
oss
rss
A
V
GS
= 25
= C
= C
= C
= 1 0 V
gs
ds
gd
10
o
+ C
+ C
C
6
1
gd
gd
( C
@ N o t e : T
V
GS
ds
10
= s h o r t e d )
@ N o t e s :
1
= 2 0 V
1 . V
2 . f = 1 M H z
8
GS
J
= 2 5
= 0 V
o
C
1 0
10
1 0
10
10
1 0
1 0
-1
-1
1 0
1
0
1
0
5
0
0 . 4
2
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
1 5 0
25
o
C
Fig 2. Transfer Characteristics
o
0 . 6
C
150
V
V
SD
Q
GS
4
2
G
o
C
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
2 5
V
, Total Gate Charge [nC]
DS
V
- 55
o
DS
C
= 1 6 0 V
V
DS
0 . 8
= 1 0 0 V
o
IRFM210A
C
= 4 0 V
6
4
@ Notes :
1 . 0
1. V
2. V
3. 250 s Pulse Test
@ N o t e s :
1 . V
2 . 2 5 0 s P u l s e T e s t
GS
DS
@ N o t e s : I
= 0 V
= 40 V
GS
= 0 V
8
6
1 . 2
D
= 3 . 3 A
1 . 4
10
8

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