IRFM210A Fairchild Semiconductor, IRFM210A Datasheet
IRFM210A
Related parts for IRFM210A
IRFM210A Summary of contents
Page 1
... Total Power Dissipation (T = Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds Characteristic * Junction-to-Ambient IRFM210A BV = 200 V DSS R = 1.5 DS(on 0. SOT-223 Gate 2. Drain 3. Source Value 200 ) 0 ...
Page 2
... IRFM210A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
Page 3
... Fig 6. Gate Charge vs. Gate-Source Voltage ( IRFM210A o 150 Notes : 250 s Pulse Test ...
Page 4
... IRFM210A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited by R DS(on 100 Notes : - 150 Single Pulse - Drain-Source Voltage [V] ...
Page 5
... GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRFM210A Charge 90 d(on) r d(off off BV DSS 1 ---- 2 -------------------- DSS ...
Page 6
... IRFM210A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...