DDB-KJS-L2 Dominant Semiconductors, DDB-KJS-L2 Datasheet - Page 4

• Manufacturer Part Number: DDB-KJS-L2
• Description: LED GaN
• Manufacturer: Dominant Semiconductors

Semiconductors
Innovating Illumination
Relative Luminous Intensity Vs Forward Current
1000
Allowable Forward Current Vs Duty Ratio
Maximum Forward Current Vs Temperature
100
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
25
20
15
10
Allowable Forward Current Vs Duty Ratio
10
2
1
0
5
0
1
0
0
1
10 20 30 40 50 60 70 80 90 100
(Ta=25 Deg C, Tp<10us)
5
Ambient Temperature
Forward Current, mA
10
TM
Duty Ratio, %
15
10
20
25
30
100
35
4
60°
80°
40°
50°
70°
90°
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
35
30
25
20
15
10
30°
5
0
1
0
350
Forward Current Vs Forward Voltage
3
Relative Intensity Vs Wavelength
20°
400
Radiation Pattern
3.5
Forward Voltage, V
10°
450
Wavelength, nm
0°
0.8
0.6
0.4
0.2
0
500
1.0
GaN : DDx-KJS-I1
4
550
4.5
600
27/06/2007 V(O)
650
5