DDB-KJS-L2 Dominant Semiconductors, DDB-KJS-L2 Datasheet - Page 3

• Manufacturer Part Number: DDB-KJS-L2
• Description: LED GaN
• Manufacturer: Dominant Semiconductors

Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Characteristics (Ta = 25˚C)
Temperature coefficient of
I
Temperature coefficient of V
I
Temperature coefficient of I
I
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage (IR = 10 µA)
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
- Junction / solder point, R
(Mounting on FR4 PCB, pad size >= 16 mm 2 per pad)
F
F
F
= 10mA; 0 ˚C <= T <= 100 ˚C
= 10mA; 0 ˚C <= T <= 100 ˚C
= 10mA; 0 ˚C <= T <= 100 ˚C
TM
th JA
th JS
V (typ)
F (typ)
dom (typ)
Symbol
TC
TC
TC
dom (typ)
V
IV
3
Part Number
Maximum Value
DDB-KJS
DDB-KJS
DDB-KJS
-40 … +100
-40 … +100
2000
200
125
500
280
20
85
5
Value
-2.60
-0.30
0.01
GaN : DDx-KJS-I1
nm / K
Unit
mcd / K
K/W
K/W
mW
Unit
mV / K
mA
mA
˚C
˚C
˚C
V
V
27/06/2007 V(O)