DPAD10 Micross, DPAD10 Datasheet

DPAD10

Manufacturer Part Number

DPAD10

Description

Dual PicoAmp Diodes

Manufacturer

Micross

Datasheet

1.DPAD10.pdf (1 pages)

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DPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:

The DPAD10 extremely low-leakage monolithic dual

diode provides a superior alternative to conventional

diode technology when reverse current (leakage) must

be minimized. In addition the monolithic dual

construction allows excellent capacitance matching per

diode. The DPAD10 features a leakage current of -10

pA and is well suited for use in applications such as

input protection for operational amplifiers.

DPAD10 Benefits:

DPAD10 Applications:

Notes:

1. Absolute maximum ratings are limiting values above which DPAD10 serviceability may be impaired.

Available Packages:

DPAD10 in TO-72

DPAD10 available as bare die

Please contact Micross for full package and die dimensions

Micross Components Europe

Tel: +44 1603 788967

Email:

Web:

SYMBOL

rSS

‐C

http://www.micross.com/distribution

chipcomponents@micross.com

Negligible Circuit Leakage Contribution

Circuit “Transparent” Except to Shunt

High-Frequency Spikes

Simplicity of Operation

Op Amp Input Protection

Multiplexer Overvoltage Protection

Click To Buy

Linear Systems replaces discontinued Siliconix DPAD10

The DPAD10 is a low leakage Monolithic Dual Pico-Amp Diode

Maximum Reverse Leakage Current

Differential Capacitance (∆C

Reverse Breakdown Voltage

Total Reverse Capacitance

CHARACTERISTICS

Forward Voltage

)

PICO-AMP DUAL DIODE

MIN.

‐45

‐‐

LOW LEAKAGE

DPAD10

FEATURES

DIRECT REPLACEMENT FOR SILICONIX DPAD10

HIGH ON ISOLATION

EXCELLENT CAPACITANCE MATCHING

ULTRALOW LEAKAGE

REVERSE BREAKDOWN VOLTAGE

REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Forward Current (Note 1)

TYP.

0.8

‐‐

MAX.

‐10

1.5

2.0

0.5

‐‐

baredie@micross.com

UNITS

Web:

TO-72 (Bottom View)

www.micross.com/distribution.aspx

= V

CONDITIONS

= ‐5V, f = 1MHz

= ‐1µA

= 1mA

= ‐ 20V

‐65°C to +150°C

‐55°C to +135°C

∆C

rss

500mW

≤ 10 pA

50mA

20fA

≤ 2.0pF

≤ 0.5pF

≥ ‐45V

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