2N3958 Micross, 2N3958 Datasheet

2N3958

Manufacturer Part Number

2N3958

Description

Low Noise

Manufacturer

Micross

Datasheet

1.2N3958.pdf (1 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3958

Manufacturer:

NSC

Quantity:

200

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ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

The 2N3958 family are matched JFET pairs for

differential amplifiers. The 2N3958 family of general

purpose JFETs is characterized for low and medium

frequency differential amplifiers requiring low offset

voltage, drift, noise and capacitance

The 2N3958 family also exhibits low capacitance - 6pF

max and a spot noise figure of -0.5dB max. The part

offers a superior tracking ability.

The hermetically sealed TO-71 and TO-78 packages

are well suited for high reliability and harsh environment

applications.

(See Packaging Information).

2N3958 Applications:

Available Packages:

2N3958 in TO-71 / TO-78

2N3958 available as bare die

Please contact

DSS1‐2

SYMBOL

FS1‐2

(off) or V

CMR

‐I

OS1‐2

‐I

DSS

GSS

OSS

fSS

(on)

RSS

ISS

GGO

GSS

/ Y

/ I

DSS

Wideband Differential Amps

High Input Impedance Amplifiers

Click To Buy

The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET

Micross

COMMON MODE REJECTION

Mismatch at Full Conduction

Gate‐To‐Gate Breakdown

OUTPUT CONDUCTANCE

TRANSCONDUCTANCE

‐20 log | V

Breakdown Voltage

High Temperature

At Full Conduction

CHARACTERISTICS

Typical Operation

DRAIN CURRENT

Operating Range

Reverse Transfer

for full package and die dimensions

Pinchoff voltage

Full Conduction

GATE VOLTAGE

GATE CURRENT

Full Conduction

CAPACITANCE

Drain‐to‐Drain

Reduced V

Differential

Mismatch

Operating

Voltage

NOISE

Figure

Input

GS1‐2

/ V

MIN.

1000

500

0.5

‐‐

MONOLITHIC DUAL

N-CHANNEL JFET

TO-71 / TO-78 (Bottom View)

2000

FEATURES

LOW DRIFT

LOW LEAKAGE

LOW NOISE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Voltage and Current for Each Transistor – Note 1

‐V

‐I

Maximum Power Dissipation

Device Dissipation @ Free Air – Total 400mW @ 25°C

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL

| V

TYP.

0.01

700

100

0.6

0.1

G(f)

‐‐

2N3958

GSS

DSO

GS1‐2

/ T| max.

| max.

MAX.

3000

1000

100

4.5

0.1

0.5

‐‐

Gate Voltage to Drain or Source

Drain to Source Voltage

Gate Forward Current

CHARACTERISTICS

OFFSET VOLTAGE

TEMPERATURE

DRIFT VS.

nV/√Hz

UNITS

µmho

Micross Components Europe

Tel: +44 1603 788967

Email:

Web:

http://www.micross.com/distribution

chipcomponents@micross.com

|∆ V

VALUE UNITS

100

= 20pA TYP.

= 10nV/√Hz TYP.

= +125°C

=20V I

∆V

GS1‐2

∆V

= 1nA I

= 20V V

= 20V I

= 20V V

f= 100Hz NBW= 6Hz

/∆T|= 5µV/°C max.

= 10 to 20V I

µV/°C

= 5 to 10V I

= 20V I

= 20V V

=20V I

= 20V I

= 20V V

= 10V I

= 0 I

=200µA f=10Hz NBW=1Hz

= 20V V

CONDITIONS

‐65°C to +200°C

+150°C

60V

50mA

= 0V R

= 200µA

= 0V f= 1MHz

CONDITIONS

= 0V f = 1kHz

= 0 I

=‐55°C to +125°C

=20V, I

= 200µA

=1µA

= 1nA

=200µA

= 0V

= 0

= 10MΩ

=200µA

= 0

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