MC10EP58 ON Semiconductor, MC10EP58 Datasheet - Page 6

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MC10EP58

Manufacturer Part Number
MC10EP58
Description
3.3V / 5V ECL 2:1 Multiplexer
Manufacturer
ON Semiconductor
Datasheet

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NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
12. Input and output parameters vary 1:1 with V
13. All loading with 50 W to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
14. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Table 11. AC CHARACTERISTICS
Symbol
Symbol
I
V
V
V
V
I
I
f
t
t
t
V
t
t
EE
IH
IL
max
PLH
PHL
JITTER
r
f
OH
OL
IH
IL
PP
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Power Supply Current
Output HIGH Voltage (Note 13)
Output LOW Voltage (Note 13)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Current
Input LOW Current
Maximum Frequency
(See Figure 2. F
Propagation Delay to
Output Differential
Cycle−to−Cycle Jitter
(See Figure 2. F
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
max
max
CC
− 2.0 V.
/JITTER)
/JITTER)
V
SEL to Q,Q
CC
D to Q,Q
= 0 V; V
CC
Q, Q
.
−1945
−1225
−1945
−1145
Min
EE
0.5
20
Min
200
150
70
= −3.0 V to −5.5 V or V
V
http://onsemi.com
CC
−40°C
−1020
−1820
Typ
= 0 V, V
28
−40°C
Typ
280
800
120
> 3
0.2
6
−1695
−1625
EE
−895
−880
Max
150
37
1200
Max
380
170
= −5.5 V to −3.0 V (Note 12)
< 2
−1945
−1225
−1945
−1145
CC
Min
0.5
20
Min
210
150
80
= 3.0 V to 5.5 V; V
−1020
−1820
25°C
Typ
31
25°C
Typ
310
800
130
> 3
0.2
CC
− 2.0 V.
−1695
−1625
−895
−880
Max
150
39
1200
Max
410
180
< 2
EE
= 0 V (Note 14)
−1145
−1945
−1225
−1945
Min
0.5
25
Min
220
150
100
−1020
−1820
85°C
Typ
85°C
33
Typ
340
800
150
> 3
0.2
−1695
−1625
−895
−880
Max
150
1200
Max
420
200
42
< 2
Unit
Unit
GHz
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps

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