MC10EP58 ON Semiconductor, MC10EP58 Datasheet - Page 3

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MC10EP58

Manufacturer Part Number
MC10EP58
Description
3.3V / 5V ECL 2:1 Multiplexer
Manufacturer
ON Semiconductor
Datasheet

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. Input and output parameters vary 1:1 with V
3. All loading with 50 W to V
Table 4. MAXIMUM RATINGS
Table 5. 10EP DC CHARACTERISTICS, PECL
V
V
V
I
I
T
T
q
q
q
q
q
T
I
V
V
V
V
I
I
Symbol
Symbol
out
BB
EE
IH
IL
A
stg
JA
JC
JA
JC
JA
sol
CC
EE
I
OH
OL
IH
IL
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Power Supply Current
Output HIGH Voltage (Note 3)
Output LOW Voltage (Note 3)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Current
Input LOW Current
BB
Sink/Source
Characteristic
CC
Parameter
− 2.0 V.
CC
Pb−Free
. V
EE
Pb
V
can vary +0.3 V to −2.2 V.
2165
1365
2090
1365
CC
Min
0.5
20
http://onsemi.com
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
= 3.3 V, V
EE
CC
EE
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
−40°C
2290
1490
Typ
28
3
EE
= 0 V (Note 2)
2415
1615
2415
1690
Max
150
37
2230
1430
2155
1460
Min
0.5
20
V
V
8 SOIC
8 SOIC
8 SOIC
8 TSSOP
8 TSSOP
8 TSSOP
DFN8
DFN8
I
I
 V
 V
Condition 2
CC
EE
25°C
2355
1555
Typ
30
2480
1680
2480
1755
Max
150
39
2290
1490
2215
1490
Min
0.5
22
−65 to +150
−40 to +85
41 to 44
41 to 44
Rating
± 0.5
100
190
130
185
140
129
265
265
85°C
2415
1615
−6
−6
50
84
Typ
6
6
31
2540
1740
2540
1815
Max
150
40
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
mA
mA
°C
°C
°C
Unit
V
V
V
V
mA
mV
mV
mV
mV
mA
mA

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