2SB0956 Panasonic Semiconductor, 2SB0956 Datasheet
2SB0956
Manufacturer Part Number
2SB0956
Description
Silicon PNP epitaxial planer type(For low-frequency power amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB0956.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB09560RL
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SB0956GRL
Manufacturer:
Panasonic - SSG
Quantity:
1 950
Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
Large collector power dissipation P
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
130 ~ 210
Symbol
V
V
V
I
I
P
T
T
HR
CP
C
R
C
j
stg
CBO
CEO
EBO
*
I
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
BE(sat)
ob
*1
(Ta=25˚C)
C
180 ~ 280
.
–55 ~ +150
2
Ratings
HS
or more, and the board
S
–20
–20
150
–5
–2
–1
1
V
I
I
V
V
I
I
V
V
CE(sat)
C
E
C
C
CB
CE
CE
CB
CB
= –1mA, I
= –10 A, I
= –1A, I
= –500mA, I
= –2V, I
= –2V, I
= –10V, I
= –6V, I
= –6V, I
.
B
Unit
Conditions
C
C
˚C
˚C
= –50mA
E
E
W
B
V
V
V
A
A
C
E
= –500mA
= –1.5A
= 50mA, f = 200MHz
= 0, f = 1MHz
= 0
= 0
B
= 0
= –50mA
*2
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
–20
130
–5
50
3
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
200
H
typ
1
40
*2
Pulse measurement
– 0.5
max
–1.2
280
–1
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
A
1
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2SB0956 Summary of contents
Page 1
Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Features Large collector power dissipation P Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through ...
Page 2
Transistor P — 1.4 Printed circut board: Copper 2 foil area of 1cm or more, and the board thickness of 1.7mm 1.2 for the collector portion. 1.0 0.8 0.6 0.4 0 100 ...