2SD874 Panasonic Semiconductor, 2SD874 Datasheet
2SD874
Manufacturer Part Number
2SD874
Description
Silicon NPN epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD874.pdf
(2 pages)
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Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB766 and 2SB766A
*
*1
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Marking
Symbol
h
FE1
Features
Large collector power dissipation P
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Parameter
Rank
h
Parameter
FE1
2SD874
2SD874A
2SD874
2SD874A
2SD874
2SD874A
2SD874
2SD874A
2SD874
2SD874A
85 ~ 170
Symbol
YQ
V
V
V
I
I
P
T
T
ZQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
*
I
V
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
*1
(Ta=25˚C)
C
120 ~ 240
.
–55 ~ +150
2
YR
Ratings
ZR
R
or more, and the board
150
1.5
30
60
25
50
5
1
1
V
I
I
I
V
V
I
I
V
V
CE(sat)
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 2mA, I
= 10 A, I
= 500mA, I
= 500mA, I
= 10V, I
= 10V, I
= 5V, I
170 ~ 340
= 20V, I
= 10V, I
.
YS
ZS
S
C
B
Unit
C
Conditions
E
E
C
˚C
˚C
E
E
W
V
V
V
A
A
= 1A
= 0
= –50mA, f = 200MHz
= 0
= 0
B
B
= 0
= 500mA
= 0, f = 1MHz
= 50mA
= 50mA
*2
*2
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
30
60
25
50
85
50
3
5
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
0.85
160
200
Z
Y
typ
0.2
1
(2SD874)
(2SD874A)
*2
Pulse measurement
max
340
0.1
0.4
1.2
20
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
A
1
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2SD874 Summary of contents
Page 1
... Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Features Large collector power dissipation P Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ...
Page 2
... A ) Collector current I C Area of safe operation (ASO) 10 Single pulse T =25˚ t=1s 0.3 DC 0.1 0.03 0.01 0.1 0 100 ( V ) Collector to emitter voltage V CE 2SD874, 2SD874A V — I CE(sat = Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0 Collector current I ...