BSP320 Siemens Semiconductor Group, BSP320 Datasheet - Page 7

• Manufacturer Part Number: BSP320
• Description: SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
• Manufacturer: Siemens Semiconductor Group

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
C
DS (on)
DS (on)
0.32
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
pF
DS
-60
3
2
1
0
= (T
)
GS
D
5
j
)
= 2.9 A, V
-20
=0V, f = 1 MHz
10
20
15
GS
98%
typ
20
= 10 V
60
25
100
30
T
°C
VDS
V
j
Ciss
Coss
Crss
160
40
7
Gate threshold voltage
V
parameter:V
V
Forward characteristics of reverse diode
I
parameter: T
GS(th)
F
GS(th)
I
F
= (V
10
5.0
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
10
10
= f ( T
V
A
-60
-1
SD
0.0
2
1
0
GS
)
j
=V
)
0.4
-20
j
, t
DS
p
, I
= 80 µs
0.8
D
20
=20µA
1.2
T
T
T
T
j
j
j
j
60
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
2.0
140
BSP 320 S
2.4
29/01/1998
T
V
j
V
SD
V
max
typ
min
200
3.0