BSP320 Siemens Semiconductor Group, BSP320 Datasheet - Page 2

• Manufacturer Part Number: BSP320
• Description: SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
• Manufacturer: Siemens Semiconductor Group

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
DS
GS
GS
= 60 V, V
= 60 V, V
= 60 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 20 µA
D
= 0.25 mA, T
GS
GS
GS
DS
= 2.9 A
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V
j
j
j
= -40 °C
= 25 °C
= 125 °C
j
= 25 °C
j
= 25°C, unless otherwise specified
1)
1)
2
copper area for drain connection
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
Symbol
T
T
R
R
j
stg
thJA
thJS
min.
-
-
-
-
-
60
2.1
Values
typ.
-
-
-
3
0.1
10
0.09
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
17
70
max.
-
4
0.1
1
100
100
0.12
29/01/1998
BSP 320 S
Unit
°C
K/W
Unit
V
µA
nA