BCX69 Infineon Technologies Corporation, BCX69 Datasheet - Page 2

• Manufacturer Part Number: BCX69
• Description: PNP Silicon af Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
I
AC Characteristics
Transition frequency
I
1) Pulse test: t ≤ 300 µ s, D = 2%
C
C
E
C
C
C
C
C
C
C
CB
CB
= 1 µA, I
= 30 mA, I
= 10 µA, I
= 5 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
= 25 V, I
= 25 V, I
B
CE
CE
C
= 100 mA
B
CE
CE
B
= 0
E
E
= 1 V
= 1 V
= 0
= 0
CE
= 0
= 0 , T
CE
= 10 V
= 10 V
= 1 V
= 5 V, f = 20 MHz
A
= 150 °C
A
= 25°C, unless otherwise specified.
BCX 69
BCX 69-10
BCX 69-16
BCX 69-25
2
Symbol
V
V
V
I
I
h
h
h
V
V
f
CBO
CBO
T
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
160
20
25
50
85
85
60
5
-
-
-
-
-
-
Values
typ.
100
160
250
100
0.6
-
-
-
-
-
-
-
-
-
-
max.
100
100
375
160
250
375
0.5
Nov-03-1999
1
-
-
-
-
-
-
-
BCX 69
Unit
V
nA
µA
-
V
MHz