BCX69 Infineon Technologies Corporation, BCX69 Datasheet
BCX69
Manufacturer Part Number
BCX69
Description
PNP Silicon af Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BCX69.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCX69
Manufacturer:
KEXIN/科信
Quantity:
20 000
Company:
Part Number:
BCX69-10
Manufacturer:
INFINEON
Quantity:
70 000
Part Number:
BCX69-10
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BCX69-10E6327
Manufacturer:
PTC
Quantity:
8 632
Company:
Part Number:
BCX69-16
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BCX69-25
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BCX69-25
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
BCX6925TA
Manufacturer:
Diodes/Zetex
Quantity:
1 904
Part Number:
BCX69TA
Manufacturer:
ZETEX
Quantity:
20 000
Thermal Resistance
Junction ambient
Junction - soldering point
PNP Silicon AF Transistors
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX 68 (NPN)
Type
BCX 69
BCX 69-10
BCX 69-16
BCX 69-25
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation , T
Junction temperature
Storage temperature
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
1)
Marking
CE
CF
CG
CH
S
= 130 °C
1 = B
1 = B
1 = B
1 = B
Pin Configuration
1
2 = C
2 = C
2 = C
2 = C
R
R
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJA
thJS
3
3 = E
3 = E
3 = E
3 = E
2
-65 ... 150
Values
≤75
≤20
100
200
150
20
25
5
1
2
1
1
Package
SOT-89
SOT-89
SOT-89
SOT-89
Nov-03-1999
BCX 69
VPS05162
2
Unit
V
A
mA
W
°C
K/W
Related parts for BCX69
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Antenna Switch Silicon Pin Diode
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Silicon Switching Diodes
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Single Igbt Driver Ic
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
5 Volt Standard Regulator
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Active Biased Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Small Signal Mosfet 20v?800v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Sipmos Small-signal Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v Small-signal-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
P-channel Mosfets Power-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Power Mosfets
Manufacturer:
Infineon Technologies Corporation
Datasheet:
BCX69 Summary of contents
Page 1
... PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX 68 (NPN) Type Marking BCX 69 CE BCX 69-10 CF BCX 69-16 CG BCX 69-25 CH Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage ...
Page 2
Electrical Characteristics at T Parameter Characteristics Collector-emitter breakdown voltage = 30 mA Collector-base breakdown voltage = 10 µ Emitter-base breakdown voltage = 1 µ ...
Page 3
Total power dissipation P * Package mounted on epoxy BCX 69 1 tot 1.0 0.8 0.6 0.4 0.2 0 Permissible pulse load totmax totDC p BCX 69 3 ...
Page 4
Base-emitter saturation voltage BEsat FE BCX Ι ˚C 100 ˚C 25 -50 ˚ ...