MTSF2P02HD Motorola Semiconductor Products, MTSF2P02HD Datasheet - Page 4

• Manufacturer Part Number: MTSF2P02HD
• Description: Single Tmos Power Fet 3.0 Amperes 20 Volts RDS ( on ) = 0.090 Ohm
• Manufacturer: Motorola Semiconductor Products

MTSF2P02HD
4
0.15
0.13
0.09
0.07
0.05
0.11
2.0
1.5
1.0
0.5
5
4
3
2
1
0
– 50
0
0
0
V GS = 4.5 V
I D = 1.2 A
– 25
1
Figure 3. On–Region Characteristics
Figure 7. On–Resistance Variation
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
0.4
Gate–to–Source Voltage
2
T J , JUNCTION TEMPERATURE ( C)
0
with Temperature
2.9 V
25
3
V GS = 8 V
3.5 V
2.7 V
2.5 V
4.5 V
0.8
50
4
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
75
5
100
6
2.1 V
2.3 V
1.9 V
1.7 V
1.5 V
1.6
I D = 2.4 A
T J = 25 C
T J = 25 C
125
7
150
2
8
1000
0.15
0.13
0.11
0.09
0.07
0.05
0.01
100
Motorola TMOS Power MOSFET Transistor Device Data
0.1
10
5
4
3
2
1
0
1
0
0
0
Figure 6. On–Resistance versus Drain Current
V GS = 0 V
V DS 10 V
Figure 8. Drain–to–Source Leakage Current
0.5
Figure 4. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
1
4
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
1
versus Voltage
T J = –55 C
2
8
V GS = 4.5 V
T J = 125 C
100 C
25 C
2.7 V
1.5
100 C
12
3
2
25 C
4
16
T J = 25 C
2.5
5
20
3