MTSF2P02HD Motorola Semiconductor Products, MTSF2P02HD Datasheet

MTSF2P02HD

Manufacturer Part Number

MTSF2P02HD

Description

Single Tmos Power Fet 3.0 Amperes 20 Volts RDS ( on ) = 0.090 Ohm

Manufacturer

Motorola Semiconductor Products

Datasheet

1.MTSF2P02HD.pdf (12 pages)

Available stocks

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Bonase Electronics (HK) Co., Limited

Part Number:

MTSF2P02HDR2

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MOT

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Designer's

Medium Power Surface Mount Products

TMOS Single P-Channel

Field Effect Transistor

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Bergquist Company.

REV 6

Motorola, Inc. 1997

Motorola TMOS Power MOSFET Transistor Device Data

Micro8

Miniature Micro8 Surface Mount Package — Saves Board Space

Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

Ultra Low R DS(on) Provides Higher Efficiency and Extends

Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

I DSS Specified at Elevated Temperature

Avalanche Energy Specified

Mounting Information for Micro8 Package Provided

DEVICE MARKING

devices are an advanced series of power MOSFETs

devices are designed for use in low voltage,

Data Sheet

MTSF2P02HDR2

Device

Reel Size

ORDERING INFORMATION

12 mm embossed tape

Tape Width

MTSF2P02HD

Source

R DS(on) = 0.090 OHM

Gate

CASE 846A–02, Style 1

Motorola Preferred Device

SINGLE TMOS

3.0 AMPERES

POWER FET

20 VOLTS

Order this document

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Micro8

by MTSF2P02HD/D

4000 units

Quantity

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