BAW101E6327 Infineon Technologies Corporation, BAW101E6327 Datasheet
BAW101E6327
Manufacturer Part Number
BAW101E6327
Description
Silicon Switching Diode Array
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAW101E6327.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW101E6327
Manufacturer:
MURATA
Quantity:
500
BAW101
Type
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 µs
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Silicon Switching Diode
BAW101
Maximum Ratings at T
Total power dissipation
T
Junction - soldering point
BAW101
1
For calculation of R
Electrically insulated high-voltage
S
medium-speed diodes
35°C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOT143
1
Configuration
parallel
Symbol
V
V
I
I
I
P
T
T
Symbol
R
F
FM
FS
j
stg
R
RM
tot
thJS
-65 ... 150
Value
Value
300
300
250
500
350
150
4.5
330
Feb-03-2003
BAW101...
Marking
JPs
Unit
Unit
V
mA
A
mW
°C
K/W
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BAW101E6327 Summary of contents
Page 1
Silicon Switching Diode Electrically insulated high-voltage medium-speed diodes BAW101 Type BAW101 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current V = 250 250 150 ° Forward voltage I = 100 Characteristics ...
Page 3
Reverse current 250V R BAW 101 Forward current BAW101 300 ...