BAW101E6327 Infineon Technologies Corporation, BAW101E6327 Datasheet
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BAW101E6327
Manufacturer Part Number
BAW101E6327
Description
Silicon Switching Diode Array
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAW101E6327.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW101E6327
Manufacturer:
MURATA
Quantity:
500
BAW101
Type
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 µs
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Silicon Switching Diode
BAW101
Maximum Ratings at T
Total power dissipation
T
Junction - soldering point
BAW101
1
For calculation of R
Electrically insulated high-voltage
S
medium-speed diodes
35°C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOT143
1
Configuration
parallel
Symbol
V
V
I
I
I
P
T
T
Symbol
R
F
FM
FS
j
stg
R
RM
tot
thJS
-65 ... 150
Value
Value
300
300
250
500
350
150
4.5
330
Feb-03-2003
BAW101...
Marking
JPs
Unit
Unit
V
mA
A
mW
°C
K/W
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BAW101E6327 Summary of contents
Page 1
Silicon Switching Diode Electrically insulated high-voltage medium-speed diodes BAW101 Type BAW101 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current V = 250 250 150 ° Forward voltage I = 100 Characteristics ...
Page 3
Reverse current 250V R BAW 101 Forward current BAW101 300 ...