MBM29LV160TM-BM90 Meet Spansion Inc., MBM29LV160TM-BM90 Datasheet - Page 19

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MBM29LV160TM-BM90

Manufacturer Part Number
MBM29LV160TM-BM90
Description
Flash Memory Cmos 16 M 2m ? 8/1m ? 16 Bit Mirrorflashtm*
Manufacturer
Meet Spansion Inc.
Datasheet
■ FUNCTIONAL DESCRIPTION
Standby Mode
Automatic Sleep Mode
Autoselect
Read Mode
Output Disable
There are two ways to implement the standby mode on the device, one using both the CE and RESET pins, and
the other via the RESET pin only.
When using both pins, CMOS standby mode is achieved with CE and RESET input held at V
this condition the current consumed is less than 5 µA Max. During Embedded Algorithm operation, V
current (I
of these standby modes.
When using the RESET pin only, CMOS standby mode is achieved with RESET input held at V
“H” or “L”) . Under this condition the current consumed is less than 5 µA Max. Once the RESET pin is set high,
the device requires t
During standby mode, the output is in the high impedance state, regardless of OE input.
Automatic sleep mode works to restrain power consumption during read-out of device data. It can be useful in
applications such as handy terminal, which requires low power consumption.
To activate this mode, the device automatically switch themselves to low power mode when the device addresses
remain stable after t
current consumed is typically 1 μA (CMOS Level).
Since the data are latched during this mode, the data are continuously read out. When the addresses are
changed, the mode is automatically canceled and the device read-out the data for changed addresses.
The Autoselect mode allows reading out of a binary code and identifies its manufacturer and type.It is intended
for use by programming equipment for the purpose of automatically matching the device to be programmed with
its corresponding programming algorithm.
To activate this mode, the programming equipment must force V
then be sequenced from the devices outputs by toggling A
A
BM User Bus Operations (Byte Mode : BYTE = V
The manufacturer and device codes may also be read via the command register, for instances when the device
is erased or programmed in a system without access to high voltage on the A
illustrated in “MBM29LV160TM/BM Standard Command Definitions” in ■DEVICE BUS OPERATION.Refer to
“Autoselect Command” in ■COMMAND DEFINITIONS.
In Word mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu = 04h) . A read cycle at
address 01h outputs device code(MBM29LV160TM: 22C4h; MBM29LV160BM: 2249h). Notice that the above
applies to Word mode. The addresses and codes differ from those of Byte mode. Refer to “Sector Protection
Verify Autoselect Codes” in ■DEVICE BUS OPERATION.
The device has two control functions required to obtain data at the outputs. CE is the power control and used
for a device selection. OE is the output control and used to gate data to the output pins.
Address access time (t
access time (t
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least t
power-up, input hardware reset or to change CE pin from “H” or “L”.
With the OE input at logic high level (V
to be in a high impedance state.
1
and A
0
CC2
. See “MBM29LV160TM/BM User Bus Operations (Word Mode: BYTE = V
) is required even when CE = “H”. The device can be read with standard access time (t
CE
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
ACC
RH
+30 ns from data valid. It is not necessary to control CE, WE, and OE in this mode. The
as a wake-up time for output to be valid for read access.
ACC
) is equal to the delay from stable addresses to valid output data. The chip enable
Retired Product DS05-20906-4E_July 31, 2007
IH
ACC
), output from the devices are disabled. This may cause the output pins
-t
OE
time.) When reading out a data without changing addresses after
IL
)” in ■DEVICE BUS OPERATION.
0
. All addresses can be either High or Low except A
MBM29LV160TM/BM
ID
on address pin A
9
pin. The command sequence is
IH
9
. Two identifier bytes may
)” and “MBM29LV160TM/
CC
SS
±0.3 V. Under
CE
±0.3 V (CE =
) from either
CC
active
90
6
,
19

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