NE9000 Renesas Electronics Corporation., NE9000 Datasheet - Page 2

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NE9000

Manufacturer Part Number
NE9000
Description
Ku-band Medium Power Gaas Mesfet
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE900076
Manufacturer:
SHARP
Quantity:
8 530
ABSOLUTE MAXIMUM RATINGS
OUTLINE DIMENSIONS
HANDLING PRECAUTIONS
DIE ATTACHMENT
Die attach can be accomplished with Au-Ge (390 10 C) preforms in
a forming gas environment. Epoxy die attach is not recommended.
BONDING
Gate and drain bonding wires should be semi-hard gold wire (3 to 8%
elongation) 30 microns or less in diameter.
Bonding should be performed with a wedge tip that has a taper of
approximately 15 . Die attach and bonding time should be kept to a
minimum. As a general rule, the bonding operation should be kept within
a 300 C to 10 minute curve. If longer periods are required, the tempera-
SYMBOLS
V
V
I
I
DS
GS
D
G
2 PLACES
1.8
+0.15
-0.05
Drain to Source Voltage
Gate to Source Voltage
Drain Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
Gate Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
0.1
Die Thickness: 110 to 160 m
+0.06
SOURCE
PARAMETERS
-0.02
S
DRAIN
Recommended Bonding Area.
Glassivated Area
Plated Wraparound (Optional)
PACKAGE OUTLINE 75
GATE
NE900000 (CHIP)
9.8 MAX
2.7 TYP
(Units in m)
7.0
50
G
50
D
0.5 ± 0.1
400
131
S
(Units in mm)
62
UNITS
0.9 MAX
mA
mA
mA
mA
mA
mA
130
52
V
V
2.3±0.1
1.13
228
2.7±0.3
3.0 MIN BOTH
2.3
430
LEADS
(T
RATINGS
A
150
300
600
= 25 C)
1.3
2.6
20
-9
5
ture should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip channel
is glassivated for mechanical protection only and does not preclude the
necessity of a clean environment.
The bonding equipment should be periodically checked for sources of
surge voltage and should be properly grounded at all times. In fact, all
test and handling equipment should be grounded to minimize the
possibilities of static discharge.
2
3
1
0
S
0
0.51
POWER DERATING CURVE
NE900100/NE900200 (CHIP)*
D
50
G
D
PACKAGE OUTLINE 89A
Case Temperature, T
50
NE9000
2.03 ± 0.2
(Units in m)
NE9001
550
116
S
NE9002
S
S
100
1.02
4.0 MIN (ALL LEADS)
50
D
G
G
1.6 MAX
A
150
( C)
0.1
S
80
62
200
142
53
240
440

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