NE9000 Renesas Electronics Corporation., NE9000 Datasheet

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NE9000

Manufacturer Part Number
NE9000
Description
Ku-band Medium Power Gaas Mesfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE9000.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE900076
Manufacturer:
SHARP
Quantity:
8 530
FEATURES
•
•
•
DESCRIPTION
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configu-
rations available are: the NE900000, a one cell die of 400 m
gate width; the NE900100, a one cell die of 750 m gate
width; and the NE900200, a two cell die of 1500 m total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around source-
metallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
ELECTRICAL CHARACTERISTICS
SYMBOLS
R
CLASS A OPERATION
HIGH OUTPUT POWER
P
G
HIGH POWER ADDED EFFICIENCY
P
TH (C-C)
P
G
I
OUT
DSS
V
g
TEST
1dB
P
1dB
1dB
ADD
m
P
T
= 7 dB
= 26.5 dBm
Saturated Drain Current at
V
Pinch-off Voltage at V
I
I
I
Transconductance at V
I
I
I
Thermal Resistance (Channel-to-Case)
Total Power Dissipation
Power Output at Test Point
P
P
f = 14.5 GHz
P
f = 14.5 GHz
P
f = 14.5
Output Power at 1 dB Compression
Point,
V
V
V
V
Gain at 1 dB Compression Point
V
V
V
V
Power Added Efficiency
f = 8 GHz
DS
DS
DS
DS
DS
DS
DS
IN
IN
IN
IN
DS
DS
DS
DS
DS
DS
DS
DS
V
= 2.5 mA
= 5 mA
= 10 mA
= 50 mA
= 90 mA
= 180 mA
= 11 dBm, V
= 12 dBm,V
= 15 dBm, V
= 19 dBm, V
DS
= 2.5 V, V
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
PARAMETERS AND CONDITIONS
= 8 V, at P
D =
D
D
D
D
D
D
D
PACKAGE OUTLINE
= 50 mA, f = 14.5 GHz
= 90 mA, f = 14.5 GHz
= 180 mA, f = 14.5 GHz
= 50 mA, f = 8 GHz
= 50 mA, f = 14.5 GHz
= 90 mA, f = 14.5 GHz
= 180 mA, f = 14.5 GHz
GS
PART NUMBER
50 mA, f = 8 GHz
DS
DS
DS
DS
= 0
1dB
= 8V, I
= 8V, I
= 8V, I
= 8 V, I
Conditions.
DS
DS
= 2.5 V,
D
D
D
D
= 2.5 V,
= 50mA
= 50mA,
= 90mA
= 180 mA,
POWER GaAs MESFET
(T
UNITS MIN
dBm 19.5
dBm
dBm
dBm
dBm
dBm
dBm
dBm
A
mA
mS
mS
mS
C/W
dB
dB
dB
dB
W
%
V
V
V
= 25 C)
-1.5
80
Ku-BAND MEDIUM
NE900089A
TYP MAX MIN
20.5
20.5
89A
-3.5
120
25
27
9
150
180
0.8
-5
19.5
-1.5
80
12
24
18
15
21
00 (CHIP), 75
9
6
3
NE900000G
NE900000
NE900075
TYPICAL LINEAR GAIN vs. FREQUENCY
California Eastern Laboratories
2.0
TYP MAX MIN
20.5
120
-3.5
25
20
27
NE9001/9002
8
150
180
0.8
-5
NE9000
Frequency (GHz)
150
22
-2
00 (CHIP), 75
NE900100G
NE900100
NE900175
TYP MAX MIN
225
-3.5
50
23
23
27
7
10.0
NE9000 SERIES
NE9001 SERIES
NE9002 SERIES
300
100
1.5
-5
25.5
300
-2
00 (CHIP), 75
NE900200G
NE900200
NE900275
TYP MAX
26.5
450
-3.5
100
25
26
7
600
50
-5
3

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NE9000 Summary of contents

Page 1

... GaAs FETs for commercial and space amplifier and oscillator applications to 20 GHz. Chip configu- rations available are: the NE900000, a one cell die of 400 m gate width; the NE900100, a one cell die of 750 m gate width; and the NE900200, a two cell die of 1500 m total gate width ...

Page 2

... OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 75 +0.15 GATE 1.8 -0.05 0.5 ± 0.1 2 PLACES SOURCE DRAIN 2.7 TYP 7.0 9.8 MAX +0.06 0.1 -0.02 NE900000 (CHIP) (Units in m) 400 131 Die Thickness: 110 to 160 m Recommended Bonding Area. Glassivated Area Plated Wraparound (Optional) HANDLING PRECAUTIONS DIE ATTACHMENT Die attach can be accomplished with Au-Ge (390 10 C) preforms in a forming gas environment ...

Page 3

... TYPICAL SMALL SIGNAL SCATTERING PARAMETERS NE900000 FREQUENCY S 11 (MHz) MAG ANG 2000 .96 -42 3000 .90 -59 4000 .87 -73 5000 .85 -85 6000 .82 -94 7000 .79 -103 8000 .75 -112 9000 .73 -120 10000 .72 -128 11000 .71 -134 12000 .72 -140 13000 .73 -144 14000 .74 -147 15000 ...

Page 4

... NE9000, NE9001, NE9002 SERIES NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS S11 18 GHz S22 18 GHz NE900200 180 FREQUENCY S 11 GHz MAG ANG 1.5 0.910 -88.000 2.0 0.879 -106.000 3.0 0.850 -129.000 4.0 0.836 -143.000 5.0 0.830 -153.000 6.0 0.827 -160.000 7.0 0.823 -165.000 8.0 0.824 -170.000 9.0 0.822 -174 ...

Page 5

... NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS S22 2 GH S11 S11 NE900275 180 FREQUENCY S 11 GHZ MAG ANG 2.0 0.900 -123.000 3.0 0.900 -146.000 4.0 0.870 -161.000 5.0 0.860 -172.000 6.0 0.850 -180.000 7.0 0.850 172.000 8.0 0.830 162.000 9.0 0.770 151.000 10 ...

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