NESG3031M14 Renesas Electronics Corporation., NESG3031M14 Datasheet - Page 3

• Manufacturer Part Number: NESG3031M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.00001
0.00001
Remark The graphs indicate nominal characteristics.
0.0001
0.0001
0.001
0.001
0.01
0.01
250
200
150
100
100
100
0.1
0.1
10
10
50
1
1
0
0.4
0.4
V
V
CE
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 1 V
= 3 V
0.5
0.5
25
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
0.6
0.6
50
Mounted on glass epoxy PWB
(1.08 cm
0.7
0.7
75
2
× 1.0 mm (t))
100
0.8
0.8
A
A
BE
BE
(˚C)
= +25°C, unless otherwise specified)
(V)
(V)
125
0.9
0.9
Data Sheet PU10415EJ03V0DS
150
1.0
1.0
0.00001
0.0001
0.001
0.01
100
0.3
0.2
0.1
0.1
10
40
30
20
10
0
1
0
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
Collector to Emitter Voltage V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
2
1
0.6
200 A
2
4
µ
0.7
NESG3031M14
6
3
0.8
180 A
BE
CB
f = 1 MHz
µ
CE
(V)
I
8
B
4
(V)
0.9
(V)
= 20 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
µ
µ
µ
µ
µ
µ
µ
µ
1.0
10
5
3