NESG3031M14 Renesas Electronics Corporation., NESG3031M14 Datasheet - Page 2

• Manufacturer Part Number: NESG3031M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Noise Figure (3)
Associated Gain (1)
Associated Gain (2)
Associated Gain (3)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MSG =
Parameter
220 to 380
S
S
21
12
FB
zJ
MSG
Symbol
S
h
P
C
OIP
FE
I
I
O (1 dB)
re
NF
NF
NF
G
G
G
CBO
EBO
21e
Note 1
Note 2
a
a
a
Note 3
3

2
µ
A
V
V
V
V
V
Z
V
Z
V
Z
V
Z
V
Z
V
Z
V
V
V
f = 5.8 GHz, Z
V
f = 5.8 GHz, Z
s, Duty Cycle ≤ 2%
Data Sheet PU10415EJ03V0DS
= +25°C)
S
S
S
S
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CB
CE
CE
CE
= Z
= Z
= Z
= Z
= Z
= Z
= 1 V, I
= 5 V, I
= 2 V, I
= 3 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V, I
= 3 V, I
= 3 V, I
Sopt
Sopt
Sopt
Sopt
Sopt
Sopt
, Z
, Z
, Z
, Z
, Z
, Z
E
C
C
C
C
C
C
C
C
C
E
C
C (set)
C (set)
Test Conditions
L
L
L
L
L
L
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
= 6 mA
= 20 mA, f = 5.8 GHz
= 6 mA, f = 2.4 GHz,
= 6 mA, f = 5.2 GHz,
= 6 mA, f = 5.8 GHz,
= 6 mA, f = 2.4 GHz,
= 6 mA, f = 5.2 GHz,
= 6 mA, f = 5.8 GHz,
= 20 mA, f = 5.8 GHz
= Z
= Z
= Z
= Z
= Z
= Z
S
S
= Z
= Z
= 20 mA,
= 20 mA,
Lopt
Lopt
Lopt
Lopt
Lopt
Lopt
Sopt
Sopt
, Z
, Z
L
L
= Z
= Z
Lopt
Lopt
MIN.
12.0
220
6.5
7.5
−
−
−
−
−
−
−
−
−
−
TYP.
0.95
16.0
10.0
0.15
15.0
13.0
18.0
300
9.0
0.6
1.1
9.5
−
−
NESG3031M14
MAX.
0.25
100
100
380
1.5
−
−
−
−
−
−
−
−
−
dBm
dBm
Unit
nA
nA
dB
dB
dB
dB
dB
dB
dB
pF
dB
−