NE5814M14 Renesas Electronics Corporation., NE5814M14 Datasheet - Page 4

• Manufacturer Part Number: NE5814M14
• Description: P-channel Low Noise Mos Field Effect Transistor For Impedance Converter Of Microphone 4-pin Lead-less Minimold M14, 1208 Pkg
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
4
Remark The graphs indicate nominal characteristics.
250
200
150
100
50
–2
–4
–6
–8
–2
–4
–6
–8
0
VOLTAGE GAIN vs. SUPPLY VOLTAGE
0
0
0
0
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VOLTAGE GAIN vs.
CONSUMPTION CURRENT
25
Ambient Temperature T
Consumption Current I
1
Supply Voltage V
Mounted on Glass Epoxy PCB
(1.08 cm
50
50
2
2
75
× 1.0 mm (t) )
3
100
DD
100
DD
(V)
A
(˚C)
C
R
V
f = 1 kHz
( A)
A
μ
V
C
R
V
f = 1 kHz
in
L
in
= +25°C, unless otherwise specified)
DD
in
L
in
= 15 kΩ
4
125
= 10 mV
= 3 pF
= 15 kΩ
= 10 mV
= 3 pF
= 2 V
Data Sheet PU10628EJ01V0DS
150
150
5
0.01
300
250
200
150
100
0.1
10
50
–2
–4
–6
–8
0
0
1
10
1
V
C
R
f = 1 kHz
R
VOLTAGE GAIN vs. FREQUENCY
TOTAL HARMONIC DISTORTION
vs. OUTPUT VOLTAGE
DD
L
in
L
= 15 kΩ
= 15 kΩ
= 3 pF
= 2 V
CONSUMPTION CURRENT
vs. SUPPLY VOLTAGE
OUTPUT VOLTAGE V
10
1
Supply Voltage V
Frequency f (Hz)
100
2
100
1 000
3
DD
out
(V)
(mVrms)
10 000
V
C
R
V
NE5814M14
DD
in
in
L
4
= 15 kΩ
= 10 mV
= 3 pF
= 2 V
100 000
1 000
5