NE5814M14 Renesas Electronics Corporation., NE5814M14 Datasheet - Page 3

• Manufacturer Part Number: NE5814M14
• Description: P-channel Low Noise Mos Field Effect Transistor For Impedance Converter Of Microphone 4-pin Lead-less Minimold M14, 1208 Pkg
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT (Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion)
Consumption Current
Input Capacitance
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Output Noise Voltage
Total Harmonic Distortion
Parameter
Symbol
Δ
THD
Δ
C
V
I
G
N
G
DD
G
iss
in
V
V
VV
Vf
A
V
V
f = 1 MHz
V
C
V
R
see Test Circuit
V
C
see Test Circuit
V
C
see Test Circuit
V
C
Data Sheet PU10628EJ01V0DS
= +25°C, unless otherwise specified)
DD
DD
DD
DD
DD
DD
DD
in
L
in
in
in
3 pF
= 15 kΩ, C
= 3 pF, f = 1 kHz, see Test Circuit
= 3 pF, f = 1 kHz → 110 Hz,
= 3 pF, f = 1 kHz, A-Curve,
= 3 pF, f = 1 kHz, see Test Circuit
= 2 V, V
= 2 V, V
= 2 V, V
= 2 → 1.5 V, V
= 2 V, V
= 2 V, V
= 2 V, V
15 kΩ
Test Conditions
in
in
in
in
in
in
in
= 0 V, R
= 0 V, R
= 10 mV, R
= 10 mV, R
= 0 V, R
= 30 mV, R
= 3 pF, f = 1 kHz,
in
= 10 mV,
33 F
L
L
L
= 15 kΩ
= 15 kΩ,
= 15 kΩ,
μ
L
L
L
= 15 kΩ,
= 15 kΩ,
= 15 kΩ,
V
V
DD
out
MIN.
−4.5
55
−
−
−
−
−
TYP.
−114
−3.0
0.05
1.5
0.3
0.1
80
MAX.
105
NE5814M14
−
−
−
−
−
−
Unit
μ
dB
dB
dB
dB
pF
%
A
3