STN3446 Stanson Technology Co., Ltd., STN3446 Datasheet - Page 3

• Manufacturer Part Number: STN3446
• Description: N Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Static
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance R
Forward Transconductance
Diode Forward Voltage
Dynamic
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Static
Static
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
T
T
Symbol
Symbol
Symbol
Symbol
V
d(on)
d(off)
Ciss
Coss
Crss
V
g
t
t
(BR)DSS
I
I
I
DS(on)
r
f
GS(th)
D(on)
V
Q
Q
fs
Q
GSS
DSS
SD
gd
gs
g
V
V
V
V
V
V
DS
V
V
V
I
V
V
I
R
DS
V
GS
GS
GS
DS
V
S
D
GS
DS
DS
DS
DD
G
DS
=1.6A,V
=6V,V
=1.0A,V
DS
=4.5V,I
=2.5V,I
=1.8V,I
=5V,I
=VGS,I
=6Ω
=0V,I
=0V,V
=20V,V
=6V,V
=6V,R
≦5V,V
Condition
Condition
Condition
Condition
=20V,V
I
f=1MHz
D
T
=2.8A
J
=55℃
GS
D
N Channel Enhancement Mode MOSFET
D
=3.6A
GS
GS
D
L
=-250uA
GS
=4.5V,
D
D
D
GEN
GS
=6Ω,
=-250uA
GS
=5.3A
=3.4A
=2.8A
=±20V
GS
=0,
=0V
=4.5V
=0V
=10V
=0V
ST
ST
ST
STN3446
Min
Min
Min
Min
6
0.4
20
N3446
N3446
N3446
STN3446 2010. V1
0.030 0.040
0.040 0.050
0.075 0.090
485
Typ
Typ
Typ
Typ
0.8
4.8
1.0
1.0
10
30
12
12
85
8
40
5.3A
±100
Max
Max
Max
Max Unit
14
18
35
16
1.0
1.2
1
8
5
pF
ns
Unit
Unit
Unit
nA
uA
nC
Ω
V
V
A
S
V