STN3446 Stanson Technology Co., Ltd., STN3446 Datasheet

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STN3446

Manufacturer Part Number
STN3446
Description
N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN3446
Manufacturer:
ST
Quantity:
1 400
Part Number:
STN3446
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
The STN3446 is the N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN
PIN
PIN
PIN CONFIGURATION
TS
TS
TS
TSOP-
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Y:
Y:
W:
W:
OP-
OP-
OP-6P
Y:
Y: Year
W:
W: Week
CONFIGURATION
CONFIGURATION
CONFIGURATION
Year
Year
Year Code
Week
Week
Week Code
6P
6P
6P
Code
Code
Code
Code
Code
Code
FEATUR
FEATUR
FEATUR
FEATURE E E E
◆ 20V/5.3A, R
◆ 20V/3.4A, R
◆ 20V/2.8A, R
R
current capability
Super high density cell design for extremely low
Exceptional an-resistance and maximum DC
TSOP-6P package design
DS(ON)
N Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
=48
=65
=90
m
m
m
Ω@VGS=4.5V
Ω@VGS=2.5V
Ω@VGS=1.8V
ST
ST
ST
STN3446
N3446
N3446
N3446
STN3446 2010. V1
5.3A

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STN3446 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... =70℃ =25℃ =70℃ STG R θ N3446 N3446 ST STN3446 N3446 5.3A Typical Unit Typical Typical Typical Unit Unit Unit 20 V ±12 V 5 1.7 A 2.0 W 1.3 150 ℃ ℃ -55/150 90 ℃/W STN3446 2010. V1 ...

Page 3

... Typ Typ Min Min Typ Typ 20 0.4 =±20V =0V =0V GS =4.5V 6 0.030 0.040 0.040 0.050 0.075 0.090 12 0.8 =0V 4.8 1.0 1.0 485 85 = =10V 30 12 STN3446 2010. V1 5.3A Max Max Unit Unit Max Max Unit Unit V 1.0 V ±100 Ω ...

Page 4

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST ST N3446 N3446 ST STN3446 N3446 N Channel Enhancement Mode MOSFET STN3446 2010. V1 5.3A ...

Page 5

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST ST N3446 N3446 ST STN3446 N3446 N Channel Enhancement Mode MOSFET STN3446 2010. V1 5.3A ...

Page 6

... SOP-6 SOP-6 PACKAGE SOP-6 SOP-6 PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST ST N3446 N3446 ST STN3446 N3446 N Channel Enhancement Mode MOSFET STN3446 2010. V1 5.3A ...

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