RSS070N05 ROHM Co. Ltd., RSS070N05 Datasheet - Page 2

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RSS070N05

Manufacturer Part Number
RSS070N05
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
∗Pulsed
Fo
* pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
rward voltage
Parameter
charge
Parameter
charge
V
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
iss
rss
r
gd
fs
f
gs
g
Symbol
V
SD
Min.
1.0
6.0
45
*
1000
Typ.
12.0
230
125
3.0
4.6
18
23
25
16
27
57
21
Min.
Max.
16.8
2.5
10
25
32
35
1
Typ.
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
= 1mA, V
=7A, V
= 7A, V
= 7A, V
= 3.5A
= 7A
L
=7.1Ω
=10Ω
=3.6Ω
= 45V, V
= 10V, I
= 10V, I
= 10V
=20V, V
=0V
= 10V
Max.
1.2
25V
25 V
GS
GS
GS
Conditions
= 10V
GS
D
= 4.5V
= 4.0V
D
R
V
DS
GS
= 1mA
= 7A
GS
G
=0V
=0V
=10Ω
=0V
= 5V
Unit
V
I
S
=1.6A/V
Condition
RSS070N05
Rev.A
GS
=0V
2/4

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