RSS070N05 ROHM Co. Ltd., RSS070N05 Datasheet

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RSS070N05

Manufacturer Part Number
RSS070N05
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
4V Drive Nch MOS FET
RSS070N05
Silicon N-channel
MOS FET
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
Power switching , DC / DC converter , Inverter
*1
*
*
D
G
D
S
(
Tot
C
R
C
Type
RSS070N05
2 Mounted on a ceramic board
Body diode)
Structure
Features
Applications
Packaging dimensions
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Mounted on a ceramic board
ource current
rain-source voltage
rain current
hanel temperature
ange of Storage temperature
hanel to ambient
ate-source voltage
PW ≤ 10 µs , Duty cycle ≤ 1 %
al power dissipation
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
R
Symbol
Symbol
th(ch-a)
I
I
V
V
P
DP
SP
T
T
GSS
I
I
D
DSS
stg
D
S
ch
*
*1
*1
*2
-55 to +150
Limits
Limits
±7.0
62.5
±28
150
1.6
45
20
28
2
o
Unit
Unit
C/W
W
o
o
V
V
A
A
A
A
C
C
External dimensions (Unit : mm)
SOP8
1pin mark
1.27
∗ A protection diode is included between the gate
( 8 )
( 1 )
0.4
∗1 ESD Protection Diode.
∗2 Body Diode.
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Equivalent circuit
(1)
(8)
2
5.0
( 5 )
( 4 )
(2)
(7)
Each lead has same dimensions
(3)
(6)
RSS070N05
Rev.A
1
1.75
0.2
(4)
(5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1/4

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RSS070N05 Summary of contents

Page 1

... 150 -55 to +150 C stg Symbol Limits Unit 62.5 C/W th(ch-a) RSS070N05 5.0 1.75 0 0.2 1.27 1pin mark Each lead has same dimensions Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗ 2 ∗ (1) (2) (3) (4) 1 (1) Source (2) Source (3) Source (4) Gate ...

Page 2

... G ∗ − 12.0 16 ∗ − − 3 ∗ − − R =3.6Ω 4 Symbol Min. Typ. Max. - - 1.2 SD RSS070N05 Conditions =0V DS = 1mA D = 10V 25V =10Ω G Condition Unit I =1.6A/V = Rev.A ...

Page 3

... On-State Resistance vs. Gate-Source Voltage 10000 1000 C iss t f 100 t d(off) oss t d(on rss 1 100 0.01 0.1 1 Drain Current : I [A] D Fig.8 Switching Characteristics RSS070N05 1000 V =4.5V Ta=125 GS pulsed 75 25 -25 100 0.01 0.1 Drain Current : I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( = pulsed o Ta=125 ...

Page 4

... R G Fig.12 Gate Charge Test Circuit d(on) Fig.11 Switching Time Waveforms Fig.13 Gate Charge Waveform RSS070N05 Pulse Width 90% 50% 50% 10% 10% 10% 90% 90 d(off off Charge Rev.A ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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