RTE002P02 ROHM Co. Ltd., RTE002P02 Datasheet - Page 2

• Manufacturer Part Number: RTE002P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Y
GSS
DSS
t
t
oss
SD
iss
rss
r
fs
f
∗
∗
∗
∗
∗
∗
Min.
−0.7
Min.
−20
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
1.0
1.1
2.0
50
35
45
−
−
−
−
−
5
5
9
6
−
Max.
Max.
−2.0
−1.2
±10
1.5
1.6
3.0
−1
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
Ω
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
= −0.1A, V
= −1mA, V
= −0.2A, V
= −0.2A, V
= −0.15A, V
= −0.15A
= 100Ω
= 10Ω
= −20V, V
= −10V, I
= −10V, I
= −10V
= ±12V, V
= 0V
= −4.5V
−15 V
Conditions
Conditions
GS
GS
GS
GS
D
D
GS
GS
DS
= −1mA
= −0.15A
=0V
=0V
= −4.5V
= −4V
=0V
=0V
= −2.5V
RTE002P02
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