RTE002P02 ROHM Co. Ltd., RTE002P02 Datasheet

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RTE002P02

Manufacturer Part Number
RTE002P02
Description
2.5v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Pch MOS FET
RTE002P02
Silicon P-channel MOS FET
1) Low On-resistance.
2) Small package (EMT3).
3) 2.5V drive.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
RTE002P02
Structure
Features
Applications
Package specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
3000
TL
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
−55 to +150
Limits
Limits
±0.2
±0.4
0.15
833
−20
±12
150
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
External dimensions (Unit : mm)
(1)Source
(2)Gate
(3)Dr
Inner circuit
EMT3
ain
°C/W
Unit
(2)
Unit
°C
°C
W
V
V
A
A
∗1
0.2
Abbreviated symbol : TW
( 3 )
0.5
( 2 )
1.6
1.0
0.5
0.3
(3)
(1)
( 1 )
0.2
∗2
0.15
0.55
RTE002P02
0.7
(1) Source
(2) Gate
(3) Drain
1/2

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RTE002P02 Summary of contents

Page 1

... BODY DIODE Symbol Limits −20 V DSS ±12 V GSS ±0 ∗1 ±0 ∗2 P 0.15 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 833 RTE002P02 1.6 0.7 0.55 0 0.2 0.2 0.15 0.5 0.5 1.0 ain Abbreviated symbol : TW (3) ∗2 (2) ∗1 (1) (1) Source (2) Gate (3) Drain Unit ° ...

Page 2

... −4. ∗ − − 100Ω L ∗ − − 10Ω G Min. Typ. Max. Unit − − −1.2 = −0.1A RTE002P02 Conditions =0V DS = −1mA D = −4. − −2. −0.15A D −15 V Conditions =0V GS 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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