NDB5060 Fairchild Semiconductor, NDB5060 Datasheet - Page 3

• Manufacturer Part Number: NDB5060
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
S
SM
rr
rr
SD
JC
JA
Parameter
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= 13 A
= 26 A,
(Note 1)
Min
Typ
0.9
2.1
54
Max
62.5
120
1.3
2.2
26
78
8
NDP5060 Rev.A
Units
°C/W
°C/W
ns
A
A
V
A