NDB5060 Fairchild Semiconductor, NDB5060 Datasheet - Page 2

• Manufacturer Part Number: NDB5060
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
W
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
AR
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
g
gs
gd
iss
oss
rss
DSS
DSS
Parameter
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 1)
(Note 1)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
I
f = 1.0 MHz
D
DD
GS
DS
GS
GS
DS
GS
GS
DS
DS
DD
GS
DS
= 26 A, V
= 60 V, V
= V
= 10 V, I
= 30 V, V
= 24 V,
= 30 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 10 V, V
= 30 V, I
= 10 V, R
GS
, I
D
D
D
= 250 µA
D
= 250 µA
GS
D
D
GS
DS
DS
GEN
= 13 A
= 13 A
GS
DS
= 26 A
= 26 A,
= 10 V
= 0 V
= 0 V
= 10 V
= 0 V,
= 0 V
= 15
T
J
T
T
= 125°C
J
J
= 125°C
= 125°C
Min
1.4
60
26
2
0.04
0.07
Typ
630
225
2.9
2.2
70
95
19
48
20
11
9
9
5
Max
-100
100
0.05
0.08
200
100
250
100
26
2.8
20
40
40
1
4
NDP5060 Rev.A
Units
mA
mJ
nC
nC
nC
µA
nA
nA
pF
pF
pF
nS
nS
nS
nS
A
V
V
A
S