SIR850DP Vishay, SIR850DP Datasheet - Page 5

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SIR850DP

Manufacturer Part Number
SIR850DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
50
40
30
20
10
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
75
60
45
30
15
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.20
1.76
1.32
0.88
0.44
0.00
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR850DP
www.vishay.com
125
150
5

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