SIR850DP Vishay, SIR850DP Datasheet

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SIR850DP

Manufacturer Part Number
SIR850DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SIR850DP-T1-GE3
Manufacturer:
ADI
Quantity:
1 502
Part Number:
SIR850DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SIR850DP-T1-GE3
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Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
25
(V)
8
6.15 mm
D
7
C
D
= 25 °C. Package limited.
0.009 at V
0.007 at V
6
D
PowerPAK SO-8
R
Bottom View
http://www.vishay.com/ppg?73257
5
DS(on)
D
GS
GS
J
(Ω)
= 4.5 V
1
= 10 V
= 150 °C)
b, f
S
2
S
N-Channel 25-V (D-S) MOSFET
3
S
5.15 mm
I
4
D
30
30
G
(A)
Steady State
a
a
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
8.4 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Synchronous Buck
- High-Side
Typical
2.4
21
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
20.1
16.1
4.8
3.1
Limit
± 20
41.7
26.7
4
260
30
30
30
25
70
35
61
b, c
b, c
b, c
a
a
b, c
b, c
a
D
S
Maximum
3.0
26
Vishay Siliconix
SiR850DP
www.vishay.com
°C/W
Unit
Unit
RoHS
mJ
°C
COMPLIANT
W
V
A
A
1

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SIR850DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... SiR850DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68825 S-82287-Rev. B, 22-Sep- 1.5 2.0 80 100 120 V = 18. SiR850DP Vishay Siliconix 1.0 0.8 0 °C C 0.4 0 125 °C C 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 1500 C 1200 iss 900 ...

Page 4

... SiR850DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 °C J 0.020 0.015 0.010 °C J 0.005 ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR850DP Vishay Siliconix 125 150 2.20 1.76 1.32 0.88 0.44 0. 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR850DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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