NDH853N Fairchild Semiconductor, NDH853N Datasheet - Page 6

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NDH853N

Manufacturer Part Number
NDH853N
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Electrical and Thermal Characteristics
Figure 15. Maximum Steady-State Drain Current
Figure 13. Transconductance Variation
3 5
3 0
2 5
2 0
1 5
1 0
9
8
7
6
5
4
5
0
0
0
with Drain Current and Temperature.
1c
V
1 b
versus Copper Mounting Pad Area.
0.05
0.03
0.02
0.01
DS
0.5
0.3
0.2
0.1
0.0001
1
=10V
5
0.2
D = 0.5
2oz COPPER MOUNTING PAD AREA (in
0.2
0.1
0.05
0.02
0.01
Single Pulse
1 0
I
D
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
, DRAIN CURRENT (A)
0.4
0.001
depending on the circuit board design.
1 5
T = -55°C
J
0.6
2 0
25°C
0.01
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
2
= 2 5 C
= 1 0 V
0.8
125°C
)
2 5
o
1a
3 0
1
0.1
t , TIME (sec)
1
(continued)
0.03
0.01
0.3
0.1
2.5
1.5
0.5
5 0
3 0
1 0
Figure 14. SOT-8 Maximum Steady-State Power
3
1
2
1
0
Figure 16. Maximum Safe Operating Area.
0.1
0
1c
1 b
R
SINGLE PULSE
Dissipation versus Copper Mounting Pad
Area.
J A
0.2
.
V
T = 25°C
GS
=See Note1c
A
1
= 1 0 V
0.2
2oz COPPER MOUNTING PAD AREA (in
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
0.4
P(pk)
1 0
T - T
Duty Cycle, D = t
R
2
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
0.6
5
JA
1
4.5"x5" FR-4 Board
T
Still Air
1 0
/ t
A
(t)
JA
= 2 5 C
1 0 0
2
2
0.8
)
o
3 0
3 0 0
NDH853N Rev. C
5 0
1a
1

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