NDH853N Fairchild Semiconductor, NDH853N Datasheet - Page 2

• Manufacturer Part Number: NDH853N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GEN
DS
= 7.6 A, V
= 0 V, I
= 24 V, V
= 20 V, V
= -20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V, I
= 15 V, V
= 10 V, I
= 15 V,
= 10 V, R
GS
, I
D
D
D
= 250 µA
D
GS
DS
D
D
GS
DS
= 250 µA
GS
GEN
= 7.6 A
DS
= 7.6 A
= 6.7 A
= 1 A,
= 10 V
= 5 V
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
0.7
30
23
1
0.014
0.021
1140
Typ
0.02
12.7
630
210
1.5
2.8
18
14
24
73
48
38
1
0.017
0.031
0.025
Max
-100
100
120
1.6
10
30
50
80
50
1
2
NDH853N Rev. C
Units
nC
nC
nC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S