CY25CAJ-8F Renesas Electronics Corporation., CY25CAJ-8F Datasheet - Page 3

• Manufacturer Part Number: CY25CAJ-8F
• Description: Nch Igbt For Strobe Flash
• Manufacturer: Renesas Electronics Corporation.

CY25CAJ-8F
Application Example
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (I
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.2.00,
device from electrostatic charge.
turn-off dv/dt must become less than 400 V/ s. In general, when R
large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large
currents since the specified gate voltage is not applied to the IGBT within the device.
full luminescence condition) of main capacitor. (C
condition is over 3 seconds.
May 25, 2005,
V
I
C
V
CP
CM
GE
M
V
CM
+
–
Recommended Operation
Trigger Transformer
Conditions
300 µF
page 3 of 4
330 V
130 A
5 V
8
1
Maximum Operation
Conditions
7
2
400 µF
350 V
150 A
4 V
Xe Tube
M
= 400 F) Repetition period under full luminescence
6
3
5
4
G (off)
= 30 , it is satisfied.
RD5CYD08
RD5CYDT08
(IGBT Drive IC)
V
GG
Control Signal
Xe
150 A :