CY25CAJ-8F Renesas Electronics Corporation., CY25CAJ-8F Datasheet
CY25CAJ-8F
Related parts for CY25CAJ-8F
CY25CAJ-8F Summary of contents
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... CY25CAJ-8F Nch IGBT for Strobe Flash Features Ultra small surface mount package (VSON- 400 V CES I : 150 A CM Drive voltage Outline PVSN0008JA-A (Package Name: VSON-8<TNP-8DBV> Note: PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3) ...
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... CY25CAJ-8F Electrical Characteristics Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Performance Curves Rev.2.00, May 25, 2005, page Symbol Min. Typ. Max. V 450 — — (BR)CES I — — 10 CES I — — ...
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... CY25CAJ-8F Application Example V CM Trigger Transformer + – Recommended Operation Conditions V 330 130 A CP 300 µ Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. ...
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... Rev.2.00, May 25, 2005, page Package Name MASS[Typ.] TNP-8DBV 0.032g c M Quantity Standard order code 3000 Type name – T +Direction (1 or 2)+3 Dimension in Millimeters Reference Symbol Min Nom Max D 2.90 3.00 3.10 E 4.30 4.40 4.50 A 0.95 b 0.25 0.30 0.40 e 0. 0.08 y 0.10 c 0.09 0.15 0.25 4.70 H 4.80 4. 0.10 0.20 0.30 1 Standard order code example CY25CAJ-8F-T13 ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...