TPCA8020-H TOSHIBA Semiconductor CORPORATION, TPCA8020-H Datasheet - Page 6

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TPCA8020-H

Manufacturer Part Number
TPCA8020-H
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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100
0.1
10
2.5
1.5
0.5
1
0.1
3
2
1
0
0
Curves must be derated linearly
with increase in temperature.
I D max (Continuous)
* Single - pulse
I D max (Pulse) *
Ta = 25°C
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
40
1000
Safe operating area
100
0.1
10
0.001
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10s
DC Opeation
P
Tc = 25°C
D
80
– Ta
0.01
10
V DSS max
DS
120
1 ms *
°
C)
(V)
10 ms *
0.1
160
100
Pulse width t
r
th
6
– t
1
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature Tc (
40
100
Single - pulse
P
D
80
(2)
(1)
(3)
– Tc
1000
120
TPCA8020-H
°
C)
2006-11-17
160

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