TPCA8020-H TOSHIBA Semiconductor CORPORATION, TPCA8020-H Datasheet - Page 5

• Manufacturer Part Number: TPCA8020-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
50
40
30
20
10
10
50
40
30
20
10
−80
0
0.1
0
0
V DS
Common source
Pulse test
Common source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common source
I D = 7.5 A
Ta = 25°C
Pulse test
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
4
10 V
V GS
Dynamic input/output
Capacitance – V
8
0
1
characteristics
R
DS (ON)
8
16
I D = 7.5 A
40
V DD = 32 V
– Ta
I D = 7.5 A, 3.8 A, 1.9 A
12
80
DS
10
g
3.8
DS
(nC)
16
°
(V)
C)
120
1.9
C oss
C rss
C iss
160
100
20
20
16
12
8
4
0
5
100
0.1
2.5
2.0
1.5
1.0
0.5
10
−80
1
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (
−0.4
0
1
I
DR
V
th
−0.6
– V
40
– Ta
10
DS
V GS = 0 V
−0.8
4.5
80
DS
TPCA8020-H
3
°
(V)
−1.0
C)
120
2006-11-17
−1.2
160