LMX2314 National Semiconductor Corporation, LMX2314 Datasheet - Page 8
LMX2314
Manufacturer Part Number
LMX2314
Description
1.2 Ghz Frequency Synthesizer For Rf Personal Communications
Manufacturer
National Semiconductor Corporation
Datasheet
1.LMX2314.pdf
(20 pages)
Charge Pump Current Specification Definitions
I1
I2
I3
DV
1 I
2 I
3 I
4 Kw
RF Sensitivity Test Block Diagram
Note 1 N
Note 2 Sensitivity limit is reached when the error of the divided RF output f
e
e
e
D o
D o-sink
D o
e
l
l
CP sink current at V
CP sink current at V
CP sink current at V
I2
I2
vs V
vs T
e
Voltage offset from positive and negative rails Dependent on VCO tuning range relative to V
l
b
l
vs I
l
D o
I1
A
Phase detector charge pump gain constant
e
temp
I2
l
l
I5
e
l
D o-source
10 000 R
e
b
a
l
l
l
Charge Pump Output Current magnitude variation vs Temperature
I3
b
l
I5
Charge Pump Output Current magnitude variation vs Voltage
l
l
l
I2
e
l
I2
e
D o
D o
D o
25 C
l
Charge Pump Output Current Sink vs Source Mismatch
a
50 P
l
e
e
e
I1
l
l l
l
I5
V
V
DV
a
P
P
l
I2
e
b
2
l
I3
64
DV
l
100%
25 C
100% and
l
100% and
e
l
I5
l
I4
l
b
temp
l
I6
l
l
b
OUT
l
I5
8
e
is greater than or equal to 1 Hz
l
I4
25 C
e
e
l
I4
I5
I6
a
e
e
e
l l
l
I6
CP source current at V
CP source current at V
CP source current at V
I5
l
25 C
100%
CC
l
and ground Typical values are between 0 5V and 1 0V
100%
D o
D o
D o
e
e
e
V
V
DV
P
P
b
2
DV
TL W 11766 – 41
TL W 11766 – 42