HY27US08281A Hynix Semiconductor, HY27US08281A Datasheet - Page 4

• Manufacturer Part Number: HY27US08281A
• Description: 128mbit 16mx8bit / 8mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

1. SUMMARY DESCRIPTION
The HYNIX HY27US(08/16)281A series is a 16Mx8bit with spare 4G bit capacity. The device is offered in 1.8V Vcc
Power Supply and in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 1024 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.
typical 2ms on a 16K-byte(X8 device) block.
Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-
ferent densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be locked using the WP# input pin.
The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-
tiple memories the RB# pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27US(08/16)281A extended reliability of 100K program/
erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the
code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-
tion.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up,
Read ID2 extension.
The Hynix HY27US(08/16)281A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP1 12 x 17 mm.
1.1 Product List
Rev 0.6 / Nov. 2005
A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
PART NUMBER
HY27US08281A
HY27US16281A
ORIZATION
x16
x8
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
2.7V - 3.6 Volt
VCC RANGE
HY27US(08/16)281A Series
48TSOP1/48USOP1
PACKAGE
4