EFC120B Excelics Semiconductor, Inc., EFC120B Datasheet - Page 2

• Manufacturer Part Number: EFC120B
• Description: Low Distortion Gaas Power Fet
• Manufacturer: Excelics Semiconductor, Inc.

Note: The data included 0.7 mils diameter Au bonding wires:
10.000
11.000
12.000
13.000
14.000
15.000
16.000
17.000
18.000
19.000
20.000
21.000
22.000
23.000
24.000
25.000
26.000
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
Freq
GHz
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
0.970
0.928
0.899 -108.1
0.884 -125.3
0.876 -138.0
0.868 -147.5
0.871 -155.2
0.866 -161.2
0.868 -166.6
0.871 -171.5
0.874 -176.7
0.878
0.878
0.884
0.885
0.890
0.890
0.895
0.898
0.905
0.911
0.912
0.922
0.919
0.923
0.930
S11
Mag
-47.8
-83.3
179.1
175.3
172.1
168.4
164.3
160.9
158.2
155.5
152.1
143.9
141.1
139.7
138.2
137.3
135.8
S11
Ang
PRELIMINARY DATA SHEET
6.538
5.302
4.250
3.482
2.884
2.462
2.141
1.889
1.681
1.516
1.380
1.263
1.159
1.074
0.992
0.926
0.862
0.807
0.754
0.703
0.647
0.595
0.549
0.505
0.460
0.442
S21
Mag
S-PARAMETERS
148.7
125.7
108.6
-11.4
-17.3
-23.3
-28.0
-33.2
-36.9
-40.3
-44.3
10V, 1/2 Idss
95.4
84.1
74.5
66.3
58.7
51.6
44.7
38.1
31.7
25.4
19.5
13.5
-5.3
S21
Ang
6.6
0.5
0.034
0.056
0.067
0.072
0.073
0.073
0.073
0.072
0.070
0.068
0.066
0.064
0.063
0.062
0.060
0.059
0.059
0.059
0.058
0.058
0.056
0.056
0.055
0.054
0.054
0.056
Low Distortion GaAs Power FET
S12
Mag
-11.4
-13.3
-14.0
-14.0
-13.8
-14.3
-13.1
-13.0
-10.6
62.7
44.8
31.7
22.4
15.7
11.0
-2.2
-4.5
-6.4
-8.0
-8.3
-9.9
-6.3
-3.4
S12
Ang
6.4
3.1
0.3
0.293
0.284
0.281
0.290
0.296 -107.6
0.323 -114.8
0.354 -119.3
0.384 -123.7
0.415 -127.2
0.445 -130.5
0.475 -134.0
0.507 -137.2
0.532 -140.6
0.561 -144.4
0.581 -148.3
0.599 -152.8
0.621 -158.4
0.644 -163.6
0.662 -168.7
0.676 -173.6
0.699 -172.1
0.713 -177.2
0.748
0.765
0.787
0.799
S22
Mag
EFC120B
-35.9
-63.5
-83.1
-95.4
178.7
176.4
173.6
171.0
S22
Ang