EFC120B Excelics Semiconductor, Inc., EFC120B Datasheet
EFC120B
Manufacturer Part Number
EFC120B
Description
Low Distortion Gaas Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC120B.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS (T
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
1dB
1dB
LINEARITY AND RELIABILITY
+28.0dBm TYPICAL OUTPUT POWER
9.5dB TYPICAL POWER GAIN AT 12GHz
HIGH BVgd FOR 10V BIAS
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
Idss SORTED IN 20mA PER BIN RANGE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
2. Exceeding any of the above ratings may reduce MTTF below design goals.
3
N
4
PASSIVATION
Excelics
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=10V, Ids=50% Idss
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=1.2mA
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
PRELIMINARY DATA SHEET
O
C
Vds=3V, Ids=3.0 mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
30mA
26dBm
175
-65/175
3.4W
a
= 25
o
C
f=12GHz
f=12GHz
f=18GHz
f=18GHz
f=12GHz
o
Low Distortion GaAs Power FET
C
O
C)
1
40
Chip Thickness: 75
All Dimensions In Microns
MIN
CONTINUOUS
26.0
10V
-4.5V
285mA
5mA
@ 3dB Compression
150
-65/150
2.8W
160
100
-15
-10
7.5
95
S
o
C
EFC120B
50
50
G
D
o
TYP
C
28.0
28.0
260
140
-2.5
-20
-17
9.5
7.0
33
40
550
156
120
S
MAX
13 microns
360
-4.0
D
G
2
S
UNIT
o
dBm
C/W
mA
mS
dB
%
V
V
V
48
100
350
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EFC120B Summary of contents
Page 1
... C) a f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz Vds=3V, Vgs=0V Vds=3V, Ids=3 ABSOLUTE 14V -8V Idss 30mA 26dBm o 175 C o -65/175 C 3.4W EFC120B 550 156 120 Chip Thickness microns All Dimensions In Microns MIN TYP MAX UNIT 26.0 28.0 dBm 28 ...
Page 2
... EFC120B S22 S22 Mag Ang 0.293 -35.9 0.284 -63.5 0.281 -83.1 0.290 -95.4 0.296 -107.6 0.323 -114.8 0.354 -119.3 0.384 -123.7 0.415 -127.2 0.445 -130.5 0.475 -134.0 0.507 -137.2 0.532 -140.6 0.561 -144.4 0.581 -148.3 0.599 -152.8 ...