IGC19T60Q Infineon Technologies, IGC19T60Q Datasheet - Page 2

• Manufacturer Part Number: IGC19T60Q
• Manufacturer: Infineon Technologies

Specifications of IGC19T60Q

• Technology: High Speed IGBT 3
• Vds (max): 600.0 V
• Ic (max): 40.0 A
• Vce(sat) (max): 2.32 V
• Vge(th) (min): 4.2 V

Maximum Ratings
Parameter
Collector-Emitter voltage, T
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction temperature
Short circuit data
1 )
2 )
3)
Static Characteristics (tested on wafer), T
Parameter
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
Electrical Characteristics (not subject to production test - verified by design / characterization)
Parameter
Collector-Emitter saturation voltage
Input capacitance
Reverse transfer capacitance
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7448C, Rev 1.0, 30.01.2012
allowed number of short circuits: <1000; time between short circuits: >1s.
depending on thermal properties of assembly
not subject to production test - verified by design/characterization
2 )
3)
V
GE
= 15V, V
p
limited by T
vj
=25 C
vj max
CC
= 400V,
vj max
2 )
T
vj
V
V
V
I
I
r
V
C
C
vj
CES
GES
Symbol
G
Symbol
=25 C
(BR)CES
CEsat
GE(th)
CEsat
i e s
r e s
= 150°C
I
C
V
V
V
V
=0.58mA , V
V
V
CE
G E
CE
GE
GE
GE
V
I
I
V
T
t
=600V , V
Conditions
Conditions
=0V , V
C
c , p u l s
S C
T
V
= 0V , f = 1M H z
=0V , I
=15V, I
=15V, I
T
v j
C E
G E
vj
C E
vj
Symbol
=175 C
=25 C
= 25 V ,
C
GE
C
C
=2 mA
=40A,
=40A
GE
GE
=20V
=V
=0V
CE
IGC19T60Q
min.
min.
1.48
600
4.2
-40 ... +175
Value
600
120
20
1 )
5
typ.
Value
Value
none
2500
1.95
typ.
5.1
2.5
75
max.
max.
2.32
150
5.6
2
Unit
°C
µs
V
A
A
V
Unit
Unit
pF
µA
nA
V

V